Ferroelectric transistors for low-power NAND flash memory

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2025-11-29 06:17:47 - Μετάφραση -

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Nature, Published online: 26 November 2025; doi:10.1038/s41586-025-09793-3Ultralow-power ferroelectric field-effect transistors are used to achieve low-power NAND flash memory, overcoming the trade-off between multi-level capability and power efficiency and paving the way for next-generation storage memory.

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